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BFR 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 12 VCollector-emitter voltage VCES 20Collector-base voltage VCBO 20Emitter-base voltage VEBO 2Collector current IC 80 mABase current IB 10Total power dissipation Ptot mWTS 69 C 580Junction temperature Tj 150 CAmbient temperature TA - 65 ... + 150Storage temperature Tstg - 65 ... + 150Thermal Resistance 1)Junction - soldering point RthJS 140 K/W1) TS is measured on the collector lead at the soldering point to the pcb.Semiconductor