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BFR193WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers3 21 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR193W RCs SOT3231 = B 2 = E 3 = CMaximum Ratings at TA = 25 C, unless otherwise specifiedParameter Symbol Value Unit12 VCollector-emitter voltage VCEO20Collector-emitter voltage VCES20Collector-base voltage VCBO2Emitter-base voltage VEBO80 mACollector current IC10Base current IB580 mWTotal power dissipation1) PtotTS 63C 150 CJunction temperature TJStorage temperature TStg -55 ... 150Thermal ResistanceParameter Symbol Value UnitK/W

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 bfr193w.pdf Проектирование, MOSFET, Мощность

 bfr193w.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bfr193w.pdf База данных, Инновации, ИМС, Транзисторы