Скачать даташит для btc2411n3g:

Spec. No. : C203N3G Issued Date : 2008.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3GDescription The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA. CE(sat) CE(sat) C BOptimal for low Voltage operation. Complementary to BTA1036N3G. Pb-free and Halogen-free package Symbol Outline BTC2411N3G SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 0.6 APower Dissipation (TA=25C) PD 225 (Note) mWPower Dissipation (TC=25C) PD 560 mWTherm