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CEP6030L/CEB6030LN-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 52 ADrain Current-Pulsed a IDM 156 AMaximum Power Dissipation @ TC = 25 C 75 WPD- Derate above 25 C 0.5 W/ COperating and Store Temperature Range TJ,Tstg -65 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 2 C/WThermal Resistance, Junction-to-Ambient RJA 62.5 C/W1998.Mar