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CEP6036/CEB6036N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 135A, RDS(ON) = 4.6m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous @ TC = 25 C 135 AID@ TC = 100 C 95 ADrain Current-Pulsed a IDM 540 AMaximum Power Dissipation @ TC = 25 C 167 WPD- Derate above 25 C 1.1 W/ CSingle Pulsed Avalanche Energy d EAS 400 mJSingle Pulsed Avalanche Current d IAS 40 ATJ,TstgOperating and Store Temperature Range -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal