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CEP60N10/CEB60N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 57A, RDS(ON) = 24m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 57 ADrain Current-Pulsed a IDM 228 AMaximum Power Dissipation @ TC = 25 C 200 WPD- Derate above 25 C 1.3 W/ CSingle Pulsed Avalanche Energy d EAS 560 mJSingle Pulsed Avalanche Current d IAS 40 AOperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 0.75 C/WTh