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CEP93A3/CEB93A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous@ TC = 25 C 150 AID @ TC = 100 C102 ADrain Current-Pulsed a IDM 600 AMaximum Power Dissipation @ TC = 25 C 120 WPD- Derate above 25 C 0.8 W/ CSingle Pulsed Avalanche Energy d EAS 648 mJSingle Pulsed Avalanche Current d IAS 36 AOperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol