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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 8m@10V100V 100A10m@4.5VDESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES APPLICATIONS Low RDS(on) High efficiency power supply Low Gate Charge Secondary synchronus rectifierMARKING EQUIVALENT CIRCUIT D D D D8 7 6 5CJAC10TH10 = Part No. Solid dot=Pin1 indicator CJAC10TH10XX XX=Date Code 1 2 3 4S S S GABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 100DSV Gate-Source Voltage V 20 GSContinuous Drain Current I 100DA Pulsed Drain Current(1) I 300DM