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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES High density cell design for ultra low R Special process technology for high ESD capability DS(on) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Good stability and uniformity with high E ASAPPLICATIONS Hard switched and high frequenc