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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667ATO-92Plastic PackageBCELow Frequency Power AmplifierComplementary CLB647/CLB647AABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL CLD667 CLD667A UNITSVCBOCollector Base Voltage 120 120 VVCEOCollector Emitter Voltage 80 100 VVEBOEmitter Base Voltage 5.0 VCollector Current IC 1.0 ACollector Current Peak ICP 2.0 APCCollector Power Dissipation 0.9 WTjJunction Temperature 150 CStorage Temperature Tstg - 55 to +150 CABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION CLD667 CLD667A UNITSCollector Base Voltage VCBO IC=10A, IE=0 >120 >120 VCollector Emitter Voltage VCEO IC=1mA, IB=0 >80 >100 VEmitter Base Voltage V

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 cld667 a.pdf Проектирование, MOSFET, Мощность

 cld667 a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cld667 a.pdf База данных, Инновации, ИМС, Транзисторы