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Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson1.0) Low Gate Charge (Typical Data:32nC) Low Reverse transfer capacitances(Typical:7pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VD