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Silicon N-Channel Power MOSFET R CS24N50 ANHD General Description VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson0.26) Low Gate Charge (Typical Data:96nC) Low Reverse transfer capacitances(Typical:44pF) 100% Single Pulse avalanche energy Test Applications AutomotiveDC Motor Control and Class D Amplifier. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Ratin