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DC COMPONENTS CO., LTD.DMBT2222ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65).055(1.40) .089(0.25)3 = Collector1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85)Characteristic Symbol Rating Unit.091(2.30).067(1.70)Collector-Base Voltage VCBO 75 V.118(3.00)Collector-Emitter Voltage VCEO 40 V .110(2.80).0043(0.11)Emitter-Base Voltage VEBO 6 V.051(1.30).0035(0.09).035(0.90)Collector Current IC 600 mATotal Power Dissipation PD 225 mW.026(0.65).004.027(0.67)Max.010(0.25)o(0.10).013(0.32)Junction Temperature TJ +150 CoDimensions in inches and (millimeters)Storage Temperature TSTG -55 to +150 CElectrical C