Скачать даташит для dmz6012e:

DMZ6012EDepletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 120 100mA Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Normally-on Switches SMPS Start-up Circuit Linear Amplifier Converters Constant Current Source Telecom Ordering Information Part Number Package Marking Remark DMZ6012E SOT-23 612 Halogen FreeAbsolute Maximum Ratings TA=25 unless otherwise specified Symbol Parameter DMZ6012E UnitVDSX Drain-to-Source Voltage[1] 600 VVDGX Drain-to-Gate Voltage[1] 600 VID Continuous Drain Current 0.1 A IDM Pulsed Drain Current[2] 0.4PD Power Dissipation 0.50 WVGS Gate-to-Source Voltage 20 V