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August 2008UniFETTMFDA24N50N-Channel MOSFET 500V, 24A, 0.19Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor- Fast switchingmance, and withstand high energy pulse in the avalanche and 100% avalanche testedcommutation mode. These devices are well suited for high effi-cient switching mode power supplies and active power factor Improved dv/dt capabilitycorrection. RoHS compliantDGTO-3PNG D SSMOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Dr