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INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA24N50FFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous;Tc=2524I AD14Tc=100I Drain Current-Single Pulsed 96 ADMP Total Dissipation 270 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.46/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websitewww.i

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 fda24n50f.pdf Проектирование, MOSFET, Мощность

 fda24n50f.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fda24n50f.pdf База данных, Инновации, ИМС, Транзисторы