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July 2005FDD6670A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow gate charge, low RDS ( ON) , fast switching speed andextremely low RDS(ON) in a small package. Fast SwitchingApplications High performance trench technology for extremely DC/DC converterlow RDS(ON) Motor DrivesDDGGSD-PAKTO-252(TO-252)SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 VVGSS Gate-Source Voltage 20 VID Continuous Drain Current @TC=25C (Note 3) 66 A@TA=25C (Not