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isc N-Channel MOSFET Transistor FDD6670AFEATURESDrain Current : I =66A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSSI Drain Current-Continuous;@Tc=25 66 ADI Drain Current-Single Pulsed 100 ADMP Total Dissipation 70 WDT Operating Junction Temperature -55~150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.81isc websitewww.iscsemi.com isc &