Скачать даташит для fdd6670as:

May 2005 FDD6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670AS is designed to replace a single 76 A, 30 V RDS(ON) max= 8.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 10.4 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncFET Schottky body diode RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The Low gate charge (29nC typical) performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the High performance trench technology for extremely performance of the FDD6670A in parallel with a low RDS(ON) Schottky diode. High power and current handling