Скачать даташит для fdd6672a:

April 2001 FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 65 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High performance trench technology for extremely low gate charge, low RDS(ON) and fast switching speed. low RDS(ON) Applications Low gate charge (33 nC typical) DC/DC converter High power and current handling capability DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 VVGSS Gate-Source Voltage 12 V ID Drain Current Continuous (Note 1a) 65 A Pulsed 100P