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April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. Fast Switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor Drives DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 VVGSS Gate-Source Voltage 16 V ID Drain Current Continuous (Note 3) 78 A