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April 2008FDD6676AS tm30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncFET schottky body diode RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Low gate charge (46nC typical) Fairchilds monolithic SyncFET technology. High performance trench technology for extremely Applications low RDS(ON) DC/DC converter High power and current handling capability Low side notebook RoHS Compliant DDGGSD-PAKTO-252(TO-252)