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October 2014FDMS0300SN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 Apackage technologies have been combined to offer the lowest Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky and high efficiencybody diode. SyncFET Schottky Body DiodeApplications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/ GPU low side switch RoHS Compliant Networking Point of Load low side switchBottom TopPin 1D GS 5 4SS