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October 2014FDMS8670StmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mFeatures General DescriptionThe FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17Apackage technologies have been combined to offer the lowest Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body DiodeApplication MSL1 robust package design RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectificationTop Bottom Pin 1SD 5
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fdms8670s.pdf Проектирование, MOSFET, Мощность
fdms8670s.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
fdms8670s.pdf База данных, Инновации, ИМС, Транзисторы



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