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May 2009FDMS8672AStmN-Channel PowerTrench SyncFETTM 30V, 28A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advanced Package and Silicon combination rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky for low rDS(on) and high efficiency body diode. SyncFET Schottky Body DiodeApplications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectificationTop Bottom Pin 1SD 5

 

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 fdms8672as.pdf Проектирование, MOSFET, Мощность

 fdms8672as.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fdms8672as.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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