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August 2010FGPF4633330V PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70Ations where low conduction and switching losses are essential. High input impedance Fast switching RoHS compliant Applications PDP SystemTO-220F G C E(Retractable)Absolute Maximum RatingsSymbol Description Ratings UnitsVCES Collector to Emitter Voltage 330 VVGES Gate to Emitter Voltage 30 V@ TC = 25oC 300 AIC pulse(1)* Collector Current Maximum Power Dissipation @ TC = 25oC 30.5 WPDMaximum Power Dissipation @ TC = 100oC 12.2 WoTJ Operating Junction Temperature -55 to +150 CoTstg Storage Temperature Range -55 to +150 CMaximum Lead Temp. for soldering
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fgpf4633.pdf Проектирование, MOSFET, Мощность
fgpf4633.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
fgpf4633.pdf База данных, Инновации, ИМС, Транзисторы



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