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FIR10N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.) G Low gate charge : Qg=35nC(Typ.) D S Low RDS(on) : RDS(on)=0.8D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR10N65FFIR10N65F = Specific Device CodeAbsolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating UnitDrain-source voltage VDSS 650 VGate-source voltage VGSS 30 VTC=25C 10 ADrain current (DC) * IDTC=100C 5.5 ADrain current (Pulsed) * IDM 40 APower dissipation PD 50 WAvalanche current (Single) IAS 10 ASingle pulsed avalanche energy EAS 608 mJAvalanche current (Repetitive) IAR 10 ARepetitive avalanche energy EAR 11.6 mJJunction temperature TJ 150C Storage