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Advance Technical InformationTrenchT2TM HiperFET VDSS = 150VFMM110-015X2FN-Channel Power ID25 = 53A MOSFET RDS(on) 20m 33T1trr(typ) = 85ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab 2500 ~VTL 1.6mm (0.062 in.) from Case for 10s 300 CTSOLD Plastic Body for 10s 260 CFeaturesFC Mounting Force 20..120 / 4.5..27 N/lb. Silicon Chip on Direct-Copper Bond(DCB) Substrate- UL Recognized PackageSymbol Test Conditions Maximum Ratings- Isolated Mounting SurfaceVDSS TJ = 25C to 175C 150 V- 2500V Electrical Isolation Avalanche RatedVDGR TJ = 25C to 175C, RGS = 1M 150 V Low QGVGSM Transient 30 V Low Drain-to-Tab

 

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 fmm110-015x2f.pdf Проектирование, MOSFET, Мощность

 fmm110-015x2f.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fmm110-015x2f.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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