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September 2001TMFRFETFQA24N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well Fast recovery body diode ( max, 250ns )suited for high efficiency switch mode power supplies,where the body diode is used such as phase-shift ZVS,basic full-bridge topology.DG TO-3PNGD SSFQA SeriesAbsolute Maximum Ratin