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July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been especially tailored to Low Crss (Typ. 40.5 pF)reduce on-state resistance, and to provide superior switching performance and high avalanche energy 100% Avalanche Testedstrength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.DDG G