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SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulsein the avalanche and commutaion mode .These devicesare well suited for high efficiency switch mode powersupply electronic lamp ballastsF :based on half bridge topology.1TO-220FFEATURES* RDS(ON) = 1.0@VGS = 10V * Low gate and reverse transfer Capacitance ( C: 18 pF typical )* Fast switching capabilityDD :* Avalanche energy tested 1* Improved dv/dt capability, high ruggednessTO-263SYMBOL2.Drain1.Gate3.SourceORDERING INFORMATION Pin Assignment Order