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GT50JR22Discrete IGBTs Silicon N-Channel IGBTGT50JR22GT50JR22GT50JR22GT50JR221. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.(3) Enhancement mode(4) High-speed switching IGBT : tf = 0.05 s (typ.) (IC = 50 A) FWD : trr = 0.35 s (typ.) (IF = 15 A)(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)(6) High junction temperature : Tj = 175 (max)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Collector3: