Скачать даташит для h10n65:

Spec. No. : MOS200906 HI-SINCERITY Issued Date : 2009.03.23 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H10N65 Series H10N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power MOSFET (650V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable Power Supply Plastic Package High Speed Power Switching Package Code: F Pin 1: Gate Pin 2: Drain 3 Pin 3: Source 2 Features 1 H10N65 Series Symbol H10N65 is a High voltage NChannel enhancement mode power MOSFET Dchip fabricated in advanced silicon epitaxial planar technology Advanced termination scheme to provide enhanced voltageblocking capability G Avalanche Energy Specified Source to Drain Diode Recovery Time Comparable to a Discrete Fast Re