Скачать даташит для hfs10n65s:

March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 650 V ID Drain Current Continuous (TC = 25 9.5* A Drain Current Continuous (TC = 100 5.7* A IDM Drain Current Pulsed (Note 1) 38* A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ IAR Avalanche Current (Note 1) 9.2 A EAR Repetitive Avalanche Energy (Note 1)