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HGTG30N60B3DData Sheet April 200460A, 600V, UFS Series N-Channel IGBT Packagingwith Anti-Parallel Hyperfast DiodeJEDEC STYLE TO-247EThe HGTG30N60B3D is a MOS gated high voltage switching Cdevice combining the best features of MOSFETs and bipolar Gtransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching Symbolapplications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor Ccontrols, power supplies and drivers for solenoids, relays and contactors.Formerly Developmenta