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HGTP12N60C3, HGT1S12N60C3,S E M I C O N D U C T O R HGT1S12N60C3SAugust 1995 24A, 600V, UFS Series N-Channel IGBTFeatures Packages JEDEC TO-220ABEMITTER 24A, 600V at TC = +25oCCOLLECTORGATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oCCOLLECTOR(FLANGE) Short Circuit Rating Low Conduction LossJEDEC TO-262AADescriptionEMITTERCOLLECTORThe HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3SGATECOLLECTORare MOS gated high voltage switching devices combining the(FLANGE)best features of MOSFETs and bipolar transistors. Thesedevices have the high input impedance of a MOSFET and thelow on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies only moderately between+25oC and +150oC.JEDEC TO-263ABThe IGBT is ideal for many high voltage switching applicationsM Aoperati