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HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Low Conduction Losstransistor. The much lower on-state voltage drop varies only Hyperfast Anti-Parallel Diodemoderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel Packagingwith the IGBT is the development type TA49188. JEDEC TO-220ABThe IGBT is ideal for many high voltage switching ECapplications operating