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HSF10N65 Product Summary Description VDS 650 V The HSF10N65 utilizes the advanced technology and low resistance package to RDS(ON),typ 800 m achieve extremely low on-resistance device which makes the system design an efficient ID 10 A and reliable solution for use in a wide variety of applications. TO220F Pin Configuration High Efficiency 100% EAS Guaranteed Improved dv/dt,di/dt capability Green Device Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, VGS @ 10V1 10 A ID@TC=100 Continuous Drain Current, VGS @ 10V1 6.5 A IDM Pulsed Drain Current2 40 A EAS Single Pulse Avalanche Energy3 700 mJ IAS Avalanche Current 16 A PD@TC=25 Total Power Dissipation4 48 W TSTG Storage Temperature Range -55 to 150 T