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HSS2301B P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2301B is the high cell density trenched P-V -20 V DSch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 89 m DS(ON),typand load switch applications. I -3 A DThe HSS2301B meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available SOT23 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage -20 V DSV Gate-Source Voltage 12 V GSI =25 Continuous Drain Current, V @ -4.5V1 -3 A D@T GSAI =70 Continuous Drain Current, V @ -4.5V1 -2.4 A D@T GSAI Pulsed Drain Current2 -12 A DMP =25 Total Power