Скачать даташит для hss2302b:

HSS2302B N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302B is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 46 m power switching and load switch applications. ID 3 A The HSS2302B meets the RoHS and Green Product requirement with full function reliability approved. SOT23S Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 V ID@TA=25 Continuous Drain Current, VGS @ 4.5V1 3 A ID@TA=70 Continuous Drain Current, VGS @ 4.5V1 2.2 A IDM Pulsed Drain Current2 10 A PD@TA=25 Total Power Dissipation3 0.71 W