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HSS2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2307 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 20 m converter applications. ID -6 A The HSS2307 meet the RoHS and Green Product requirement with full function reliability approved. Super Low Gate Charge SOT 23 Pin Configurations Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 12 V ID@TA=25 Continuous Drain Current, VGS @ -4.5V1 -6 A ID@TA=70 Continuous Drain Current, VGS @ -4.5V1 -4 A IDM Pulsed Drain Current2 -24 A PD@TA=25 Total Power Dissipation3 1.4 W PD@TA=70
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hss2307.pdf Проектирование, MOSFET, Мощность
hss2307.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
hss2307.pdf База данных, Инновации, ИМС, Транзисторы



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