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Spec. No. : HE6712HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP122 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temperature ................................................................... -55 ~ +150 CR1 R2Junction Temperature .......................................................... +150 C MaximumE Maximum Power DissipationTotal Power Dissipation (TC=25C) .................................................................................................................... 65 WTotal Power Dissipation (TA=25C) ..............................................................................

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