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HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-3L TO-3PS-3MD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking InformationPackage CodePM BP : TO-220FB-3L M : TO-220FB-3MHY3210HY3210 HY3210 PS: TO-3PS-3L B: TO-263-2LYYXXXJWW GYYXXXJWW G YYXXXJWW GPM: TO-3PS-3MPS PMAssembly Material Date Code HY3210 HY3210 YYXXXJWW G YYXXXJWW GYYXXX WW G : Lead Free DeviceNote: lead-free products contain molding compounds/die attach materials an