Скачать даташит для ipb114n03l-g_ipp114n03l-g:

Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Avalanche rated Pb-free plating; RoHS compliantType IPP114N03L G IPB114N03L GPackage PG-TO220-3 PG-TO263-3Marking 114N03L 114N03LMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI V =10 V, T =25 CContinuous drain current 30 AD GS CV =10 V, T =100 C30GS CV =4.5 V, T =25 C30GS CV =4.5 V, GS26T =100 CCI T =25 C210Pulsed drain current2) D,pulse CT =25 C30Avalanche current, singl