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IPD60R600P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET with excellent easeof use, e.g. very low ringing tendency, outstanding robustness of bodydiode against hard commutation and excellent ESD capability.21Furthermore, extremely low switching and conduction losses makeswitching applications even more efficient, more compact and much3cooler.FeaturesDrainPin 2 Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggednessGate Significant reduction of switching and conduction losse