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isc N-Channel MOSFET Transistor IPP114N12N3IIPP114N12N3FEATURESStatic drain-source on-resistance:RDS(on) 11.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 120 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 75 ADI Drain Current-Single Pulsed 300 ADMP Total Dissipation @T =25 136 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 1.1Channel-to-ambient thermal resistance/WRth(ch-a) 621isc