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PD - 9.1670BIRF1010EHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationTO-220ABlevels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throu