Скачать даташит для irf1010esl:

PD - 9.1720IRF1010ES/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating TemperatureRDS(on) = 0.012G Fast Switching Fully Avalanche RatedID = 83A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device designthat HEXFET Power MOSFETs are well known for, provides the designer withan extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable of accommodating diesizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262possible on-resistance in any existing surface mount