Справочник транзисторов.

 

Скачать даташит для irf1310n:

irf1310nirf1310n

isc N-Channel MOSFET Transistor IRF1310NIIRF1310NFEATURESStatic drain-source on-resistance:RDS(on) 0.036Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 42 ADI Drain Current-Single Pulsed 140 ADMP Total Dissipation @T =25 160 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.95Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websitewww

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 irf1310n.pdf Проектирование, MOSFET, Мощность

 irf1310n.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf1310n.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.