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PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fastswitching speed and ruggedized device design thatHEXFET power MOSFETs are well known for, providesthe designer with an extremely efficient and reliabledevice for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides thehighest power capability and the lowest possible on-resistance in any existin